Please use this identifier to cite or link to this item: https://hdl.handle.net/10955/699
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dc.contributor.authorBruno, Emanuela-
dc.contributor.authorScaramuzza, Nicola-
dc.contributor.authorVersace, Carlo-
dc.date.accessioned2015-05-04T10:49:41Z-
dc.date.available2015-05-04T10:49:41Z-
dc.date.issued2009-11-09-
dc.identifier.urihttp://hdl.handle.net/10955/699-
dc.descriptionDottorato di Ricerca in Science and Technologies of Mesophases & Molecular Materials, (STM3), Ciclo XXII a.a. 2008-2009en_US
dc.description.abstractFerroelectric domains play an essential role in all ferroelectric materials applications, for example, microelectromechanical sensors systems (MEMS) and integrated optical systems. The prime interest in recent years is, however, in non-volatile random accesses memories (FRAM) based on ferroelectric thin film. This requires substantial improvement in the understanding of the basic proprieties at the nanometer length scale. Especially the domain nucleation and growth processes in ferroelectric is of key importance. As the optical methods are limited by diffraction, novel high resolution techniques are required. The scanning force methods introduced during this thesis offer the required high resolution together with high sensitivity. In this thesis experimental and theoretical evidence for the origin of the force acting on the tip, the cantilever deflection and the image contrast mechanisms is given for various SFM (Scanning Force Microscopy) operation modes. For imaging ferroelectric domains the best suited SPM technique is the piezoresponse SFM that is performed with the tip in contact with the sample. The spontaneous growth of the domains 1 nucleating in lead zirconate titanate sample is investigated in detail using the EFM (Electrostatic Force Microscopy) technique. Even more interesting is the case where the domains are intentionally created switching the spontaneous polarization by means of an electric field between the EFM tip and an electrode below the sample. This allows to create any desired pattern of domains. The ability to use the same tip for domain switching and imaging is another advantage of the EFM. The domain formed in this way varies in size from few nanometers to few micrometers. Using EFM technique we demonstrate ferroelectrostatic switching in Lead Zircanate Titanate (PZT) thin film. This has important technological implication because the ferroelectric switching must be used in ferroelectric devices.en_US
dc.description.sponsorshipUniversità della Calabrisen_US
dc.language.isoenen_US
dc.relation.ispartofseriesFIS/07 FIS/01;-
dc.subjectFisica sperimentaleen_US
dc.subjectTecnologieen_US
dc.subjectMateriali Elettricien_US
dc.subjectMateriali ferroelettricien_US
dc.subjectFilm sottilien_US
dc.subjectCristalli liquidien_US
dc.subjectDispositivien_US
dc.titleScanning probe microscopy studies and dynamic behaviour of ferroelectric domains in PbZr0.53Ti0.47O3 thin filmsen_US
dc.typeThesisen_US
Appears in Collections:Dipartimento di Fisica - Tesi di Dottorato

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