Please use this identifier to cite or link to this item: https://hdl.handle.net/10955/5449
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dc.contributor.authorCosentino, Giuseppe-
dc.contributor.authorCrupi, Felice-
dc.date.accessioned2024-03-07T12:27:14Z-
dc.date.available2024-03-07T12:27:14Z-
dc.date.issued2021-05-05-
dc.identifier.urihttps://hdl.handle.net/10955/5449-
dc.descriptionDipartimento di Ingegneria Informatica, Modellistica, Elettronica e Sistemistica Dottorato di Ricerca in ICT. Ciclo XXXIIIen_US
dc.language.isoenen_US
dc.publisherUniversità della Calabriaen_US
dc.relation.ispartofseriesING-INF/01;-
dc.subjectSiC Power MOSFETsen_US
dc.subjectDefectivenessen_US
dc.subjectThreshold-Voltage Instabilityen_US
dc.subjectPBTI, flicker noiseen_US
dc.subjectResearch Subject Categories::TECHNOLOGY::Information technology::Computer engineeringen_US
dc.titleStudy characterization of modern 4h-sic power mosfetsFen_US
dc.typeThesisen_US
Appears in Collections:Dipartimento di Ingegneria Informatica, Modellistica, Elettronica e Sistemistica - Tesi di Dottorato

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