Study characterization of modern 4h-sic power mosfetsF

dc.contributor.author	Cosentino, Giuseppe
dc.contributor.author	Crupi, Felice
dc.date.accessioned	2024-03-07T12:27:14Z
dc.date.available	2024-03-07T12:27:14Z
dc.date.issued	2021-05-05
dc.identifier.uri	https://hdl.handle.net/10955/5449
dc.description	Dipartimento di Ingegneria Informatica, Modellistica, Elettronica e Sistemistica Dottorato di Ricerca in ICT. Ciclo XXXIII	en_US
dc.language.iso	en	en_US
dc.publisher	Università della Calabria	en_US
dc.relation.ispartofseries	ING-INF/01;
dc.subject	SiC Power MOSFETs	en_US
dc.subject	Defectiveness	en_US
dc.subject	Threshold-Voltage Instability	en_US
dc.subject	PBTI, flicker noise	en_US
dc.subject	Research Subject Categories::TECHNOLOGY::Information technology::Computer engineering	en_US
dc.title	Study characterization of modern 4h-sic power mosfetsF	en_US
dc.type	Thesis	en_US